日本語
NIHON UNIVERSITY's 
College of Engineering 
Department of Electrical and Electronic Engineering 

Updated : 2019/08/22 
Assistant Professor 
Ishikawa Mizue 

Tel.024-956-8793  
Fax.024-956-8861  
My website is here.  

Career (Number of the published data : 2)
Toshiba Corporation  Corporate Research & Development Center  2006/04/01-2018/07/31 
Nihon University, College of Engineering  Department of Electrical and Electronic Engineering  Assistant Professor  2019/04/01-Present 

Academic background (Number of the published data : 3)
Nihon University  College of Science and Technology  Department of Physics  2004/03/25  Graduated  Domestic 
Osaka University  Graduate School of Engineering Science  Department of Materials Engineering Science  Doctor prophase  2006/03/25  Completed  Domestic 
Osaka University  Graduate School of Engineering Science  Department of Systems Innovation  Doctor later  2019/03/25  Completed  Domestic 

Licenses and qualifications (Number of the published data : 2)
中学校・高等学校教諭 一種免許(理科、数学)  2004/03 
産業用ロボットの教示等・検査等の業務に係る特別教育 修了  2009/02 

Current state of research and teaching activities
・半導体中でのスピン伝導評価に関する研究
・SiスピンMOSFET応用に向けた材料開発 

Research Areas (Number of the published data : 4)
Electron device/Electronic equipment 
Electronic materials/Electric materials 
General applied physics 
Inorganic materials/Physical properties 

Research keywords (Number of the published data : 3)
Spintronics 
Si spin 
Heusler 

Subject of research (Number of the published data : 3)
Research on the spin transport property in semiconductors  2019/04/01-Present 
New material development for Si-spin MOSFET  2019/04/01-Present 
Dependence of spin transport signals on impurity concentration in n-type Si  2019/04/01-Present 
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Papers (Number of the published data : 34)
Spin relaxation through lateral spin transport in heavily doped n-type silicon  Phys. Rev. B  2017 
Improved read disturb and write error rates in voltage-control spintronics memory (VoCSM) by controlling energy barrier height  Appl. Phys. Lett.  2017 
Giant voltage-controlled magnetic anisotropy effect in a crystallographically strained CoFe system  Appl. Phys. Express  2018 
Research rerated to spin relaxation mechanism and high efficiency spin injection/detection for Si spintronics devices  大阪大学大学院基礎工学研究科システム創成専攻 博士課程学位論文  2019/03/25 
Ultra-High-Efficiency Writing in Voltage-Control Spintronics Memory (VoCSM): The Most Promising Embedded Memory for Deep Learning  J. Ele. Dev. Soc. 6  2018 
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Research presentations (Number of the published data : 40)
Oral presentation(general)  Temperature Dependence of Nonlocal Spin Transport in Si<100> Lateral Spin-Valve Devices  SSDM2018  2018/09/10 
Oral presentation(general)  Large local magnetoresistance at room temperature in Si<100> devices  Intermag2018  2018/04/22 
Poster presentation  Si<100>スピン伝導素子のスピン信号強度増大  第78回応用物理学会秋季学術講演会  2017/09/07 
Poster presentation  High-speed voltage-control spintronics memory focused on reduction in write current  Non-Volatile Memory Technology Symposium (NVMTS)  2017/08/30 
Poster presentation  Spin Relaxation Mechanism in Heavily Doped n-type Silicon  Spintech IX  2017/06/04 
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Intellectual property rights (Number of the published data : 77)
Patent  ホイスラー合金を有する積層体、この積層体を用いたスピンMOS電界効果トランジスタ及びトンネル磁気抵抗効果素子 
Patent  Spin MOS field effect transistor and tunneling magnetoresistive effectelement using stack having Heusler alloy 
Patent  磁気メモリ 
Patent  スピントランジスタメモリ 
Patent  磁気記憶装置及び半導体集積回路 
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Alloted class (Number of the published data : 6)
電気電子制作実習 
電気電子基礎実験I 
自主創造の基礎2 
工科系数学V 
Cプログラミング及び演習 
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Memberships of academic societies (Number of the published data : 2)
日本磁気学会 
応用物理学会 
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